AES Semigas


6 August 2020

MACOM launches GaN-on-SiC PA product line MACOM PURE CARBIDE

At the IEEE International Microwave Symposium (IMS 2020) virtual event (4–6 August), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has introduced its new gallium nitride on silicon carbide (GaN-on-SiC) power amplifier product line, branded MACOM PURE CARBIDE. The firm also launched the first two new products in the product line, the MAPC-A1000 and the MAPC-A1100.

“This new product line significantly enhances the capability of our existing RF Power product portfolio,” says president & CEO Stephen G. Daly. “GaN-on-SiC is a compelling technology and we are excited to begin offering our customers both standard and custom MACOM PURE CARBIDE power amplifier solutions,” he adds.

The MAPC-A1000 is a high-power GaN-on-SiC amplifier designed to operate between 30MHz and 2.7GHz and is housed in a surface-mount plastic package. The easy-to-use general-purpose amplifier integrates an input match that simplifies the customer’s design-in effort. The amplifier can deliver output power of more than 25W (44dBm) at greater than 50% efficiency from 500MHz to 2.7GHz when tested in a circuit designed for operation over 2.2GHz simultaneous bandwidth.

The MAPC-A1100 is a high-power GaN-on-SiC amplifier designed to operate up to 3.5GHz. The device is capable of supporting both continuous-wave (CW) and pulsed operations with output power levels of at least 65W (48.1dBm) in an air-cavity ceramic package.

The two new general-purpose amplifier products are suitable for use in avionics, high-power mobile radios, wireless systems and test instrumentation.

Tags: M/A-COM




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