AES Semigas


17 December 2020

EPC launches 3mΩ, 40V eGaN FET for high-power-density solutions

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – says that it is advancing the performance capability of low-voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3mΩ, 40V) eGaN FET.

The device is suitable for applications with demanding requirements for performance in space-constrained form factors including USB-C battery chargers and ultra-thin point-of-load (POL) converters. Other low-voltage applications benefiting from the fast-switching speeds and ultra-high efficiency of the EPC2055 include LED lighting, 12V–24V input motor drivers, and light detection & ranging (LiDAR) systems for robotics, drones and autonomous cars.

“The EPC2055 is a very good example of the rapid evolution of GaN FET technology,” says co-founder & CEO Alex Lidow. “This 40V device offers both smaller size and reduced parasitics compared with previous-generation 40V GaN FETs and at lower cost; thus offering designers both improved performance and cost savings.”

The EPC90132 development board is a 40V maximum device voltage, 25A maximum output current, half bridge with onboard gate drives, featuring the EPC2055 eGaN FETs. This 2” x 2” (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2055. Both the EPC2055 and EPC90132 are available to order from distributor Digi-Key Corp.

Tags: EPC E-mode GaN FETs Power electronics




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