AES Semigas


15 December 2020

Navitas wins Semiconductor Design Innovation Excellence Award

At the awards gala of the third annual Shenzhen International Semiconductor and Emerging Applications Exhibition (SemiExpo 2020) in China (8–10 December), Navitas Semiconductor Inc of El Segundo, CA, USA was recognized by the China Communication Industry Association (CCIA) with the Semiconductor Design Innovation Excellence Award, presented to Navitas’ Lolly (Hui) Ren by Shiying Xu, chairman of the Shenzhen Semiconductor and Display Industry Association.

Navitas was selected on the basis of the high performance of its GaNFast power ICs, which have been used in industries from mobile chargers to data centers, solar inverters, electric vehicles (EVs) and mobility applications.

Founded in 2014, Navitas introduced what it claimed to be the first commercial gallium nitride (GaN) power ICs. The firm says that its proprietary ‘AllGaN’ process design kit (PDK) monolithically integrates GaN power field-effect transistors (FETs) with GaN analog and logic circuits, enabling faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets.

“GaNFast has been adopted by many leading tech companies in the industry, including Xiaomi, OPPO, Lenovo and RealMe in their flagship fast chargers,” says Charles (Yingjie) Zha, VP & general manager of Navitas China.

Also at SemiExpo, Navitas’ Jason (Yupu) Tao introduced the high performance and environmental benefits of gallium nitride in his presentation ‘Navitas GaNFast: A New Era in Fast Charging’.

In addition, visitors to the Navitas booth learned about the latest Navitas GaNFast devices and reference designs, which can achieve small size, low weight and high efficiency together with fast charging speeds for end products ranging from smartphones and tablets to laptops, monitors and gaming systems.

Tags: GaN Power electronics





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