News: Microelectronics
18 December 2020
Toyoda Gosei’s GaN power devices chosen for Japan’s CO2 reduction project
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has been selected, together with the research group of professor Hiroshi Amano at Nagoya University and IKS Co Ltd, for the development of gallium nitride (GaN) power devices in the Japanese Ministry of the Environment’s ‘Project for the Accelerated Adoption and Spread of Innovative Components and Materials to Achieve CO2 Reductions’.
Power devices are used for power control in industry, mobility, home appliances and many other fields. But, with the spread of renewable energy and electric vehicles (EVs), higher-performance power devices are needed to reduce power loss when controlling high power loads.
Toyoda Gosei says that it is leveraging its expertise in blue LEDs and using their main material, gallium nitride, in developing next-generation power devices that can efficiently control high power. In the Ministry of the Environment project, Toyoda Gosei and its partners will accelerate development of GaN power devices for application to power conditioners for solar power generation and EVs with the aim of cutting power loss. They are also seeking to apply these improved power conditioners in micro-grids that serve distinct communities, which will contribute to CO2 reductions in the entire power system.
Toyoda Gosei doubles operating current in vertical GaN power device from 50A to 100A
