News: Microelectronics
28 December 2020
Transphorm closes $15m private placement
Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified 650V and 900V gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion applications — has announced the closing of a common-stock-only private placement of 5,000,000 shares at a price of $3.00 per share, resulting in gross proceeds of $15m (before deducting placement agent commissions, financial advisor fees and other offering expenses).
“We are very pleased with the strong support from the financial community for Transphorm’s vision and the representative growth opportunities for our high-voltage GaN power devices,” says CEO Mario Rivas. “In addition to strengthening Transphorm’s overall financial position, completion of this funding enables us to aggressively ramp production in support of secured design-ins for fast-charging power adapter applications, while simultaneously expanding the sampling and qualification of our Gen IV and Gen V SuperGaN products for electric vehicle (EV) automotive applications,” he adds. “Entering 2021, we are well positioned to benefit from industry megatrends, such as 5G communications and vehicle electrification, due to the increasing demand for high-reliability, high-performance GaN power conversion devices that can deliver the features and functionality required by a growing cross-section of strategic partners and customers.”
Transphorm intends to utilize the net proceeds to scale volume shipments of GaN products for the fast-charging power adapter, server, communication and gaming power supply markets as well as converters/inverters for industrial and renewable applications, expanded sampling and qualification in EV automotive applications, growth of its epitaxial wafer business, as well as working capital to support general operations.
Transphorm raising $15m in private placement
Transphorm expands multi-year development agreement with Yaskawa
