AES Semigas


2 December 2020

UnitedSiC launches first 750V silicon carbide FETs

Silicon carbide (SiC) power semiconductor maker United Silicon Carbide Inc (UnitedSiC) of Monmouth Junction, NJ, USA has launched the first four devices based on its Gen 4 SiC FET technology platform. As the first and only 750V SiC FETs currently available on the market, the Gen 4 devices enable what are claimed to be new performance levels, based on leading figures of merit (FoM), that benefit power applications across automotive, industrial charging, telecom rectifiers, data-center power factor correction (PFC), and DC-DC conversion as well as renewable energy and energy storage.

Available in options with on-resistance (RDS(on)) of 18mΩ and 60mΩ, the new SiC FETs deliver what are claimed to be unmatched FoMs with reduced on-resistance per unit area, and low intrinsic capacitance. In hard-switching applications, the Gen 4 FETs exhibit what is reckoned to be the lowest RDS(on) x EOSS (mΩ-μJ), resulting in lower turn-on and turn-off loss. In soft-switching applications, their low RDS(on) x Coss(tr) (mΩ-nF) specification provides lower conduction loss and higher frequency. The devices not only surpass existing competitive SiC MOSFET performance, whether running cool (25°C) or hot (125°C), but also offer the lowest integral diode VF with excellent reverse recovery, delivering low dead-time losses and increased efficiency.

UnitedSiC says that, in expanding its range to 750V, the new devices offer more designer headroom and reduced design constraints. This higher VDS rating also makes the FETs beneficial for 400/500V bus voltage applications, the firm adds. With a widely compatible gate drive of +/-20V, 5V Vth, all devices can be driven with 0V to +12V gate voltages. This means that they work with existing SiC MOSFET, silicon IGBTs and silicon MOSFET gate drivers.

“These devices help address the challenges facing engineers working across sectors with the highest voltage and power demands – from DC-DC conversion and on-board charging to power factor correction and solar inverters,” says Anup Bhalla, VP engineering at UnitedSiC.

“We will be announcing many new Gen 4 devices over the next nine months which will further improve on cost-effectiveness, heat efficiency and design headroom,” he adds. “This will support all sectors in overcoming the challenges of mass adoption and to accelerate innovation.”

Pricing for the new 750V Gen 4 SiC FETs (in 1000-unit quantities, FOB USA) range from $3.57 for the 60mΩ UJ4C075060K3S to $7.20 for the 18mΩ UJ4C075018K4S. All devices are available from authorized distributors.

Tags: SiC power devices




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