18 February 2020
Infineon launches CoolSiC MOSFET 650V family, extending reliability and performance to even more applications
Infineon Technologies AG of Munich, Germany has expanded its silicon carbide (SiC) product portfolio with 650V devices. The firm says that, with the newly launched CoolSiC MOSFETs, it is addressing the growing demand for energy efficiency, power density and robustness in a wide range of applications, including server, telecom and industrial switched-mode power supplies (SMPS), solar energy systems, energy storage and battery formation, uninterruptible power system (UPS), motor drives and electric vehicle (EV) charging.
“With this launch, Infineon complements its broad silicon-, silicon carbide (SiC)- and gallium nitride (GaN)-based power semiconductor portfolio in the 600V/650V power domain,” says Steffen Metzger, senior director High Voltage Conversion at Infineon’s Power Management & Multimarket Division. “It underlines our unique position in the market, being the only manufacturer with such a broad offering for all three power technologies,” he claims. “Additionally, the new CoolSiC family supports our claim to be the number-one supplier of SiC MOSFET switches for industrial purposes.”
Picture: Infineon’s CoolSiC MOSFET 650V devices.
The CoolSiC MOSFET 650V devices are rated from 27mΩ to 107mΩ, available in classic TO-247 3-pin as well as TO-247 4-pin packages, allowing even lower switching losses. As for all previous CoolSiC MOSFET products, the new family of 650V devices is based on Infineon’s trench semiconductor technology. Maximizing the strong physical characteristics of SiC, this ensures that the devices offer superior reliability, best-in-class switching and conduction losses, it is claimed. Additionally, they feature the highest transconductance level (gain), threshold voltage (Vth) of 4V and short-circuit robustness, the firm adds. Trench technology hence allows for the lowest losses in application and highest reliability in operation – without any compromise, it is claimed.
Infineon says that, compared with other silicon and silicon carbide solutions on the market, its 650V CoolSiC MOSFETs offer benefits such as switching efficiency at higher frequencies and outstanding reliability. Due to the very low on-state resistance (RDS(on)) dependency on temperature, they feature what is reckoned to be excellent thermal behavior. The devices include robust and stable body diodes, retaining a very low level of reverse recovery charge (Qrr), about 80% less compared with the best superjunction CoolMOS MOSFET. The commutation-robustness helps to achieve an overall system efficiency of 98%, for example through the usage of continuous conduction mode totem-pole power factor correction (PFC).
To ease the application design using 650V CoolSiC MOSFETs and to ensure high-performance operation of the devices, Infineon offers dedicated 1-channel and 2-channel galvanically isolated EiceDRIVER gate-driver ICs. Combining CoolSiC switches and dedicated gate-driver ICs, this helps to lower system costs as well as total cost of ownership and enables energy-efficiency gains. The CoolSiC MOSFETs also work seamlessly with other ICs from Infineon’s EiceDRIVER gate-driver family.
The CoolSiC MOSFET 650V family comprises eight variants (which can be ordered now) housed in two through-hole TO-247 packages. Three dedicated gate-driver ICs will be available from March.