AES Semigas


10 February 2020

SemiQ launches 650V, 1200V and 1700V SiC Schottky diode family

SemiQ (previously Global Power Technologies Group) of Lake Forest, CA, USA – which manufacturing SiC components and SiC epiwafers for the development of low-cost, high-frequency, high-temperature and high-efficiency power semiconductor devices – has announced the release to production of its new family of third-generation silicon carbide (SiC) diodes, featuring blocking voltages of 650V, 1200V and 1700V with forward-current starting at 8A up to 50A per chip. Packages include TO-220-2L, TO-220-3L, TO-247-2L, TO-247-3L, SOT-227, TO-263 as well as bare die.

The Gen-3 products represent an improvement in reliability, device ruggedness, surge current capability, and moisture resistance, says the firm. Extensive qualification testing includes over 8 million device hours of high-temperature reverse bias (HTRB) and humidity testing with bias (H3TRB). All packaged devices are 100% tested for unclamped inductive load. Also, SemiQ provides a robust and reliable, redundant supply chain, including at least three suppliers of SiC substrates, at least four suppliers of SiC epitaxy, two qualified SiC wafer fabs, and multiple sources for high-volume packaging and testing.

SemiQ is an integrated development and manufacturing company that grows its own SiC epitaxy and is assembling a redundant supply chain with multiple substrate suppliers, multiple epitaxial suppliers, two wafer fabrication facilities, and multiple packaging and testing facilities.

The firm’s product line includes SiC power discretes (diodes and MOSFETs), silicon (Si) and SiC power modules, SiC wafers and die, and SiC epiwafers. It also offers custom semiconductor module design for power system engineers needing modules that accommodate challenging customer-driven power conversion designs and applications.

Tags: SiC epitaxy SiC Schottky barrier diodes



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