AES Semigas


15 January 2020

ROHM’s SiCrystal wins $120m multi-year deal to supply 150mm silicon carbide wafers to ST

Single-crystal silicon carbide (SiC) wafer maker SiCrystal AG of Erlangen, Germany (a company of power semiconductor manufacturer ROHM group of Kyoto, Japan) has signed a multi-year agreement to supply more than $120m of 150mm SiC wafers to STMicroelectronics of Geneva, Switzerland during what is described as this current period of demand ramp-up for silicon carbide power devices.

“This additional long-term SiC substrate supply agreement comes on top of the external capacity we have already secured and the internal capacity we are ramping,” says STMicroelectronics’ president & CEO Jean-Marc Chery. “It will enable ST to increase the volume and balance of the wafers we will need to meet the strong demand ramp-up from customers for automotive and industrial programs over the next years,” he adds.

“SiCrystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC wafers for many years,” says SiCrystal’s president & CEO Dr Robert Eckstein. “We are very pleased to enter into this supply agreement with our long-standing customer ST. We will continue to support our partner to expand silicon carbide business by ramping up wafer quantities continuously.”

The adoption of silicon carbide devices in power electronics is accelerating in both the automotive and industrial markets, say the firms. With this agreement, the two companies aim to contribute to the increasingly widespread use of SiC in these markets.

See related items:

ST acquires remaining 45% stake in silicon carbide wafer maker Norstel AB

Cree and ST expand and extend silicon carbide wafer supply agreement

ST to supply SiC power electronics to Renault-Nissan-Mitsubishi for high-speed on-board chargers in next-gen EVs

Tags: SiC substrates Power electronics STMicroelectronics



Book This Space