News: Microelectronics
20 July 2020
Qorvo boosts 2.9-3.5GHz GaN power amplifier by 50% to 150W
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has introduced a gallium nitride (GaN) power amplifier (PA) that delivers a 50% increase in power for improved range, performance and multi-target tracking in S-band (2-4GHz) phased-array radars.
The QPA3070 is said to leapfrog existing industry offerings, providing a first-ever 150W of power for the 2.9-3.5GHz frequency range, 58% power-added efficiency (PAE) and 28dB power gain. Qorvo says that this is possible through its ultra-reliable and highly efficient gallium nitride on silicon carbide (GaN-on-SiC) process technology, which offers superior efficiency, power density and affordability.
The PA delivers these features in a small (7mm x 7mm x 0.85mm) and cost-effective surface-mount package, which enables engineers to design higher-power radar solutions with significant size, weight, power and cost (SWAP-C) improvements, and bring them to market faster.
The QPA3070 PA is available now to qualified customers.
