AES Semigas


9 July 2020

SweGaN expands to larger HQ

SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for for telecom, satellite, defense and power applications, has relocated its corporate headquarters to a new facility in Linköping that combines a lab housing several production tools and an administration and office area. Concurrently, SweGaN has added 150mm (6-inch) QuanFINE GaN-on-SiC epiwafers to its product portfolio for and high-power switching devices.

The new HQ is just 200m from Linköping University and 10km from Linköping’s international airport, enabling easy access for visits by customers and partners. Constructed with meter-thick concrete walls and formerly used by the Swedish Défense Research Agency (FOI), the new facility was opened in first-quarter 2020.

“The facility is a huge contrast from our previous cramped quarters” says CEO Olof Kordina. “The lab area has incredibly robust 1m-thick walls… [it] houses SweGaN’s main operational offices and a lab for production and R&D,” he adds.

Also, responding to significant customer demand for larger QuanFINE products, SweGaN has developed the 150mm epi growth process and delivered the new 150mm QuanFINE epiwafers to customers, starting already in Q1/2020. The 150mm epiwafers will boost the manufacturing capacity of GaN-on-SiC RF devices for various applications. “The new QuanFINE 150mm epiwafers are mass-produced in our new high-capacity reactor,” notes Kordina.

“Our new product signals that SweGaN is aligning its production capacity and capability closely with our customers’ needs for the rapidly expanding 5G networks, defense radars and satellite communication,” states chief technology officer Jr-Tai Chen. “The 150mm QuanFINE product will also facilitate the development of high-end GaN power devices, where price–performance ratio and reliability are critical elements for our customers.”

Highlighting that device manufacturers typically execute over 100 steps during the fabrication of a device, a larger epiwafer – in simple terms – means that manufacturers can produce more devices in the same cycle time, creating clear benefits for return-on-investment.

SweGaN claims that the unique, simplified QuanFINE heterostructure provides superior electrical and thermal properties, including low current dispersion, excellent heat dissipation and high breakdown performance, to ensure the best long-term return-on-investment for customer product development for RF and power applications.

See related items:

SweGaN named finalist in Nordic region’s Techarena Challenge 2020

SweGaN selected as one of Nordic Cleantech Open top 25 most innovative start-ups

SweGaN grows revenue 300% year-on-year in 2019

Tags: GaN-on-SiC HEMT Epitaxial wafers



Book This Space