AES Semigas


4 June 2020

Infineon adds 1700V surface-mounted devices to CoolSiC MOSFET range, targeting auxiliary power supplies

Having added the 650V voltage class to its portfolio in February, Infineon Technologies AG of Munich, Germany has complemented its CoolSiC MOSFET range by launching the 1700V class with its proprietary trench semiconductor technology. Maximizing the strong physical characteristics of silicon carbide (SiC), this ensures that the new 1700V surface-mounted devices (SMD) offer what is said to be superior reliability as well as low switching and conduction losses. The 1700V CoolSiC MOSFETs are targeting auxiliary power supplies in three-phase conversion systems such as motor drives, renewables, charging infrastructure and high-voltage direct current (HVDC) systems.

Such low-power applications usually operate below 100W. In these cases, designers very often prefer a single-ended flyback topology. With the new 1700V CoolSiC MOSFETs in SMD package, this topology is now even enabled for DC-link connected auxiliary circuits up to 1000VDC input voltage. High-efficiency and high-reliability auxiliary converters using a single-ended flyback converter can now be implemented in three-phase power conversion systems, leading to the smallest footprints and a reduced bill-of-materials.

“Trench technology of a CoolSiC MOSFET balancing performance and reliability in operation is now available for 1700 V,” says Dr Peter Friedrichs, senior director SiC in Infineon’s Industrial Power Control Division. “It combines the best of SiC properties: low losses with small footprint, in a high-voltage SMD package. This helps our customers to significantly reduce the complexity in their auxiliary power supplies.”

The 1700V blocking voltage eliminates design concerns regarding overvoltage margin and reliability of power supplies, says Infineon. CoolSiC trench technology features the lowest device capacitances and gate charges for transistors of this voltage class, claims the firm. The result is a reduction in power loss of more than 50% as well as 2.5% higher efficiency compared with state-of-the-art 1500V silicon MOSFETs, it is reckoned. The efficiency is 0.6% higher, compared with other 1700 SiC MOSFETs. The low losses enable compact SMD assembly with natural convection cooling without the need for a heatsink.

The new 1700V CoolSiC trench MOSFETs are optimized for flyback topologies with +12V/0V gate-source voltage compatible with common PWM controllers. Thus, they do not need a gate driver IC and can be operated directly by the flyback controller. On-resistance ratings are 450mΩ, 650mΩ or 1000mΩ. The new 7-lead D2PAK SMD package offers extended creepage and clearance distances over 7mm. With that, it fulfills the usual 1700V application requirements and PCB specifications, minimizing isolation efforts for the design.

CoolSiC MOSFETs 1700V in D2PAK-7L package are available now and in series production.

Tags: Infineon



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