AES Semigas


30 June 2020

Infineon adds 62mm package to CoolSiC MOSFET 1200V module family

Infineon Technologies AG of Munich, Germany has added another industry-standard package to its family of CoolSiC MOSFET 1200V modules.

Designed in half-bridge topology and based on trench chip technology, the proven 62mm device opens up silicon carbide for applications in the medium power range, starting at 250kW – where silicon reaches the limits of power density with insulated-gate bipolar transistor (IGBT) technology. Compared with a 62mm IGBT module, the list of applications now additionally includes solar, server, energy storage, electric vehicle (EV) charger, traction, commercial induction cooking and power conversion systems.

Picture: The 62mm module (which comes in variants of 6mΩ/250A, 3mΩ/357A and 2mΩ/500A respectively) features Infineon’s CoolSiC MOSFET 1200V chip set, which enables high current density.

The 62mm module features Infineon’s CoolSiC MOSFETs, which enable high current density. Very low switching and conducting losses minimize cooling efforts, whereas operating the device at high switching frequency allows for using smaller magnetic components. By implementing CoolSiC chip technology, it is possible to design smaller inverter designs for the application in terms of size, so overall system costs can be reduced.

With a base plate and screw connections, the housing is characterized by a very robust mechanical design, which is optimized for the highest system availability, a minimum of service cost and off-time losses. The reliability is made possible by high thermal cycling capability and a continuous operating temperature (Tvjop) of 150°C. The symmetrical internal design of the housing allows identical switching conditions for the upper and lower switch. As an option, the thermal performance of the module can be improved even further with pre-applied thermal interface material (TIM).

CoolSiC MOSFETs 1200V in the 62mm package come in variants of 6mΩ/250A, 3mΩ/357A and 2mΩ/500A, respectively. Designed for fast characterization (double pulse/continuous operation), an evaluation board is available for the devices. For ease of use, it offers flexible adjustment of the gate voltage and gate resistors. At the same time, it can serve as a reference design for driver boards for series production.

Tags: Infineon SiC MOSFET



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