AES Semigas


3 June 2020

Navitas launches 650V, 6mm x 8mm PQFN-packaged GaNFast power ICs with integrated cooling pad

Navitas Semiconductor Inc of El Segundo, CA, USA has announced a new range of 650V-rated GaNFast power ICs in 6mm x 8mm PQFN packaging with a proprietary, integrated cooling pad for high-efficiency, high-density power systems.

Founded in 2014, Navitas introduced what it claimed to be the first commercial gallium nitride (GaN) power ICs. The firm says that its proprietary ‘AllGaN’ process design kit (PDK) monolithically integrates GaN power field-effect transistors (FETs) with GaN analog and logic circuits, enabling faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets.

Navitas says that GaNFast power ICs enable next-generational upgrades across diverse markets, from 25-100W consumer and mobile USB-C fast chargers and adapters for smartphones and laptops, to 200-800W TV and all-in-one computers and on up to multi-kW electric vehicles (EV), industrial and data-center power supplies.

“As we’ve seen in recent releases from Xiaomi and Lenovo, GaNFast power ICs run at high speeds and drastically shrink the size and cost of passive components in fast chargers and adapters,” notes Navitas’ chief technology officer/chief operating officer & co-founder Dan Kinzer. “The NV612x-series delivers a cool 10-15°C reduction in temperature with an enlarged thermal interface to the PCB and a direct thermal and electrical connection to the system ground, enabling the world’s highest power density and passing all thermal specifications and agency approvals,” he adds.

Navitas says that, while competing solutions require additional, complex, external driving and protection components, the unique and proprietary monolithic integration of GaN FET, GaN digital and GaN analog circuits means that the new GaNFast ICs deliver what is claimed to be the simplest, smallest, fastest and now even cooler performance. This combination of simplicity and capability drives what it says is the world’s smallest-size fast chargers to achieve power densities as high as 1W/cc at 65W and 1.25W/cc at 300W, far beyond any other discrete GaN or silicon solutions.

For power electronics designers, the new NV612x-series of GaNFast power ICs offers a solution to thermal problems by providing an immediate improvement in heat dissipation through the printed-circuit board (PCB), says Navitas. The 6mm x 8mm range with advanced cooling pad is offered at the same price as the existing 5mm x 6mm GaNFast range and, in some cases, the new low temperature may enable the designer to substitute a smaller-die version to reduce system costs further.

The new range of 650V-rated power ICs (300mΩ NV6123, 175mΩ NV6125 and 125mΩ NV6127) includes complete gate drive and protection circuits plus GaN power FETs in 6mm x 8mm surface-mount PQFN, low-inductance (high-speed) packaging.

Design-support includes detailed datasheets, electrical models (SPICE), mechanical models (.stp) plus a thermal-layout application note (AN011). All parts are in high-volume mass production and available immediately from Navitas distribution partners, with prices starting as low as $1.19 in 1000-unit quantities.

Tags: GaN Power electronics




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