AES Semigas


16 June 2020

Siltronic acquiring further GaN-on-Si epi reactor

Silicon wafer manufacturer Siltronic AG of Munich, Germany says that, since its gallium nitride-on-silicon (GaN-on-Si) wafers have exhibited very good performance in the pilot lines of its customers, it has decided to invest further in an epitaxial reactor.

Fast-growing new applications such as data centers, renewables and the next generation of wireless networks (5G) need high switching frequencies and efficient energy management while simultaneously working under high power density. GaN technology enables all three requirements, says Siltronic. By doing so, GaN can not only support future growth markets but also help to contribute in parallel to decarbonize digitalization, energy distribution and mobility, it adds. GaN-on-Si wafers are hence expected to be increasingly used as the material of choice for such applications.

Siltronic’s GaN-on-Si activities commenced as early as 2011 by joining the respective Imec Industry Affiliation Program (IIAP). A comprehensive and high-performing GaN-on-Si technology platform was developed including GaN wafers intended for use in efficient power electronics as well as GaN-on-Si wafers for high-frequency applications (such as 5G) based on 6” and 8” wafer diameters.

Siltronic is also investing in research on this future technology at the European Union (EU) level. Together with 25 other partners, the firm says that it is driving GaN technology closer to the limits of its physical properties as part of the European ‘Ultimate GaN’ research project, strengthening Europe’s competence in power products and sustainable energy management.

Tags: GaN-on-Si



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