AES Semigas


28 May 2020

Nitride Semiconductors launches 365nm UV-LED chip for semiconductor manufacturing exposure systems

Japan’s Nitride Semiconductors Co Ltd (which was spun off from Tokushima University in 2000 and claims to have developed the first highly efficient ultraviolet light-emitting diode) has developed what it says is the first UV-LED for use as a light source in exposure systems in semiconductor and PCB manufacturing.

Exposure systems in semiconductor manufacturing currently still use UV lamps containing mercury. However, there are functional restrictions such as long standby time, short lifetime, low UV illuminance stability and inconvenient on/off control. It is therefore expected that the United Nations Environment Program Minamata Convention will promote switching to semiconductor (LED) light sources due to environmental issues.

Nitride Semiconductors says that the new NS365L-9RXT 365nm-wavelength UV-LED chip has demonstrated high efficiency, energy saving and long-life, and that the UV output power is 3.2W (at a forward current If of 3A and forward voltage Vf of 4.6V).

The LED also has a narrow directional angle suitable for semiconductor exposure. For accurate exposure, parallel light is required. However, UV-LED light sources generally have a wide directional angle (of about 120°), and the amount of light captured for exposure tends to be insufficient. Therefore, by combining a deep reflector with a lens of high UV transmittance, the firm has achieved a directional angle of 15° or less. This makes it possible to exchange the UV lamp light source of the conventional exposure system with UV-LEDs instead of purchasing new UV-LED exposure systems.

The new LED is also very compact, with a 9mm (length) x 9mm (width) x 8.5mm (height), so mounting density can be increased.

The unit price per 10,000 in mass production for the new NS365L-9RXT UV-LED is about $50 each.

Tags: UV LEDs



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