AES Semigas


12 November 2020

Mitsubishi launching 4-terminal 1200V SiC MOSFETs

Tokyo-based Mitsubishi Electric Corp is to launch of a new series of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), the N-series of 1200V SiC MOSFETs.

Mitsubishi Electric’s new N-series 1200V SiC-MOSFET in a TO-247-4 package.

Picture: Mitsubishi Electric’s new N-series 1200V SiC-MOSFET in a TO-247-4 package.

The new power semiconductor devices have a 15.9mm x 41.0mm x 5.0mm TO-247-4 package (which separates the driver-source terminal from the power-source terminal, unlike conventional 3-pin packages).

The adoption of a four-pin package reduces parasitic inductance (a problem in high-speed switching), eliminating the gate-source voltage drops due to the current variations. This helps to reduce switching loss by about 30% compared with the existing TO-247-3 packaged products.

The SiC MOSFET exhibits a good figure of merit (FOM) of 1450mΩ-nC (on-resistance multiplied by gate-drain charge at 100°C junction temperature) and high self-turn-on tolerance.

Using a higher carrier frequency (which determines the ON/OFF timing of switching in the inverter circuit) to drive the new devices helps to reduce switching-power loss, enabling smaller and simpler cooling systems as well as smaller reactors and other peripheral components, helping to reduce the power consumption and physical size of overall power-supply systems requiring high-voltage conversion.

The creepage distance (the shortest distance over the surface between two conductive parts) between the drain terminal and the source terminal has been made wider than in TO-247-3-packaged products for more flexible application, including in outdoor installations where dust and dirt easily accumulate.

The new lineup of six models includes three models (the 80mΩ, 38A BM080N120K, the 40mΩ, 68A BM040N120K and the 22mΩ, 102A BM022N120K) for industrial applications (e.g. photovoltaic power systems) as well as three corresponding models (the BM080N120KJ, BM040N120KJ and BM022N120KJ) compatible with the Automotive Electronics Council’s AEC-Q101 standards for applications in electric vehicles (EVs), such as for onboard chargers (OBCs).

Development of the new SiC products was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO). Sample shipments start in November.

Tags: Mitsubishi Electric SiC power MOSFET




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