14 October 2020
EPC Space launches rad-hard eGaN power transistor die on ceramic adaptors
EPC Space LLC of Haverhill, MA, USA has launched a family of rad-hard enhancement-mode power transistor die on ceramic adaptors spanning a range of 40-300V and 4-30A, and demonstrating what are said to be significant performance advantages over competitive silicon-based rad-hard power MOSFETs. The lower resistance and gate charge enable faster power supply switching frequencies, resulting in higher power densities, higher efficiencies and more compact and lighter-weight circuitry for critical spaceborne missions.
The die adaptor series provides easy printed circuit board (PCB) mounting for plug-and play functionality, allowing designers to speed the time-to-market for critical applications using rad-hard GaN transistors.
Applications benefiting from the performance and fast deployment of the products include power supplies for satellites and mission equipment, light detection & ranging (LiDAR) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.
“Beyond the superior performance, proven reliability and ease of design, these devices offer superior radiation hardness under heavy ions (SEE) and gamma radiation (TID),” says CEO Bel Lazar.
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