AES Semigas


21 October 2020

Transphorm appoints former Nexperia general manager as independent director

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified 650V and 900V gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion applications — has appointed Dr Julian Humphreys as a new independent director on its board, effective 14 October.

The firm says that Humphreys has substantial knowledge in all aspects of the power semiconductor business including profit & loss (P&L), sales & marketing, development, and design of power semiconductor technologies. He most recently served as senior VP & general manager at Nexperia B.V., a long-term cooperation partner to Transphorm in the global automotive market. Prior to Nexperia, he was VP & general manager of Nexperia’s predecessor NXP Semiconductors N.V. Standard Products Division. Humphreys holds a Bachelor of Engineering in electronics and a Ph.D. in semiconductor physics, both from the University of Liverpool.

“Dr Humphreys brings exceptional experience and highly relevant industry knowledge, specifically within power semiconductor technology,” comments CEO Mario Rivas. “At this stage in the company’s growth, it is imperative that the leadership and expertise of our board continues to expand,” he adds. “With the addition of Julian, we have added an independent director who can offer the company well informed guidance, perspective and oversight as we continue to execute on Transphorm’s long-term strategic plan.”

Tags: Transphorm GaN-on-Si GaN HEMT Power electronics




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