AES Semigas


5 February 2021

Infineon launches 650V CoolSiC Hybrid IGBT discrete family

Infineon Technologies AG of Munich, Germany has launched a 650V CoolSiC Hybrid IGBT (insulated-gate bipolar transistor) portfolio in a discrete package with 650V blocking voltage.

The CoolSiC Hybrid product family combines key benefits of the 650V TRENCHSTOP 5 IGBT technology and the unipolar structure of co-packed Schottky barrier CoolSiC diodes.

With what is said to be superior switching frequencies and reduced switching losses, the devices are especially suitable for DC–DC power converters and power factor correction (PFC). These can typically be found in applications such as battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS) as well as server and telecom switched-mode power supplies (SMPS).

Due to a freewheeling silicon carbide (SiC) Schottky barrier diode co-packed with an IGBT, the CoolSiC Hybrid IGBTs perform with significantly reduced switching losses at almost unchanged dv/dt and di/dt values. Compared with a standard silicon diode solution, they offer up to 60% reduction in Eon and 30% reduction in Eoff. Alternatively, the switching frequency can be increased at least by 40% with unchanged output power requirements. A higher switching frequency can allow a reduction in passive components size and thus lower bill-of-material cost. The Hybrid IGBTs can be used as a drop-in replacement for TRENCHSTOP 5 IGBTs, allowing an improvement in efficiency of 0.1% for each 10kHz switching frequency without redesign efforts.

The product family creates a bridge between pure silicon solutions and high-performing SiC MOSFET designs. Even more, in comparison to pure silicon designs, Hybrid IGBTs can improve electromagnetic compatibility and system reliability, says Infineon. Because of the unipolar nature of Schottky barrier diodes, the diode can switch quickly without severe oscillations and risk of parasitic turn-on. Customers can choose between a TO-247-3 pin or a TO-247-4 pin Kelvin emitter package. The fourth pin of the Kelvin emitter package allows for an ultra-low-inductance gate-emitter control loop and reduces the total switching losses.

The CoolSiC Hybrid discrete IGBT family follows the path of previously released CoolSiC Hybrid IGBT EasyPACK 1B and 2B modules with both an IGBT chip and CoolSiC Schottky diode.

Available for order now, the discrete portfolio comprises 40A, 50A and 75A 650V TRENCHSTOP 5 ultra-fast H5 IGBTs co-packed with half-rated CoolSiC Gen 6 diodes, or medium-speed S5 IGBTs co-packed with full-rated CoolSiC Gen 6 diodes.

See related items:

Infineon launches CoolSiC MOSFET 650V family, extending reliability and performance to even more applicationsl

Tags: Infineon SiC MOSFET