27 April 2021
Nexperia makes available second-generation 650V power GaN FET device family
Nexperia BV of Nijmegen, Netherlands (which manufactures discrete and MOSFET components and analog & logic ICs) has announced volume availability of its second-generation 650V power GaN FET device family (GAN041-650WSB), offering significant performance advantages over previous technologies.
With on-resistance (RDS(on)) performance down to 35mΩ (typical), the new power GaN FETs target single-phase AC/DC and DC/DC industrial switched-mode power supplies (SMPS), ranging from 2kW to 10kW, especially server and telecoms supplies that must meet 80 PLUS Titanium efficiency regulations. The devices are also suitable for solar inverters and servo drives in the same power range.
Available in TO-247 packaging, the new 650V H2 power GaN FETs deliver a 36% shrinkage in die size for a given RDS(on) value, for better stability and efficiency. The cascode configuration eliminates the need for complicated drivers, speeding time to market. The devices are said to deliver outstanding performance in both hard-switching and soft-switching configurations, offering designers maximum flexibility.
“Titanium is the most demanding of the 80 PLUS specifications, requiring >91% efficiency under full load conditions (>96% at 50% load),” notes GaN strategic marketing director Dilder Chowdhury. “Achieving this level of performance in server power applications operating at 2kW and above, using conventional silicon components, is complex and challenging,” he adds. “Nexperia’s new power GaN FETs are ideally suited to an elegant, bridgeless totem pole configuration that uses fewer components and reduces both physical size and costs.”
Designers can see Nexperia GaN FETs in action by visiting Nexperia’s booth at the PCIM (Power Conversion and Intelligent Motion) Digital Days event (3–7 May).