News: Microelectronics
8 December 2021
EPC launches 100V, 23mΩ eGaN power transistor for high-power-density power conversion and LiDAR
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has launched the EPC2070, a 100V GaN transistor with a maximum on-resistance RDS(on) of 23mΩ and a 34A pulsed output current for high efficiency power conversion in a 1mm x 1.1mm footprint.
Applications demanding higher efficiency and power density no longer have to choose between size and performance, says EPC. In addition, the low cost of the EPC2070 brings the performance of GaN FETs at a price comparable to silicon MOSFETs. Applications benefiting from this performance, small size and low cost include 48V input power converters up to 60W for computing and telecom systems, time of flight (ToF) modules using vertical-cavity surface-emitting lasers (VCSELs) for camera modules, laptops and smart phones, LED lighting, and Class-D audio.
“The ability of eGaN-based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon,” says CEO Alex Lidow. “The 100V, EPC2070 is a great addition to our fifth-generation family of products offering designers the ability to go to higher power densities than what is possible with silicon MOSFETs.”
The EPC90141 development board is a 100V maximum device voltage half-bridge with onboard gate drives, featuring the EPC2070 eGaN FETs. The 2” x 2” (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2070.
The EPC2070 eGaN FET is priced at $0.67 each for 2500 units. The EPC90141 development board is priced at $123.75/each. Both the EPC2070 and EPC90141 are available for purchase from distributor Digi-Key Corp.
EPC adds 40V, 1.6mΩ eGaN FET for high-power-density telecom, netcom and computing solutions
