News: Microelectronics
9 December 2021
Innoscience inaugurates ASML lithography scanner
As an integrated device manufacturer (IDM) manufacturing 8-inch gallium nitride on silicon (GaN-on-Si) wafers for power switching applications, Innoscience Technology (Zhuhai) Co Ltd recently held a ceremony to celebrate the inauguration of a lithography scanner made by ASML of Veldhoven, The Netherlands. Due to the imaging performance and unique dual-stage TWINSCAN architecture of ASML’s scanner, the productivity and line yield of Innoscience’s GaN-on-Si power devices has been improved, reckons the firm. During the ceremony, ASML VP & China Country general manager Shen Bo (on behalf of ASML) was presented with the ‘Best Strategic Partner’ award by Innoscience.
In recent years, the global semiconductor industry has put a spotlight on ‘third-generation semiconductors’ such as gallium nitride (GaN) and silicon carbide (SiC), characterized by their smaller size, higher switching frequencies capabilities and higher-efficiency energy management with higher power densities than what is possible with traditional silicon material. Such new materials can fulfill global strategic needs such as energy saving, emission reduction, smart manufacturing etc, says Innoscience. GaN has broad market prospects and can penetrate a wide range of applications spanning consumers, industrials and automotive.
“We introduced ASML's lithography scanner in the second quarter of this year, which has enhanced our lithography process window, line yield, productivity and cost efficiency,” says Innoscience’s CEO Jay Son. “After the scanner move-in, ASML’s customer service team and our engineers efficiently overcame the technical challenges through on-site verification and iteration to successfully achieve trial production within only three months, and eventually entered the formal mass-production stage in October,” he adds. “By working with ASML, the world’s leading supplier in the semiconductor industry, Innoscience’s production process has been streamlined and accelerated to support the booming GaN semiconductor industry.”
This is also the first time that ASML's lithography system has made a breakthrough into the global mass production of 8-inch GaN-on-Si power semiconductor wafers. To better support Innoscience, ASML has been upgrading the lithography scanner according to Innoscience’s manufacturing requirements. The introduction of ASML lithography scanner will continue to facilitate the mass production of Innoscience’s GaN-on-Si power semiconductor devices and to contribute to its long-term development.
“The booming growth of Innoscience reflects the development and long-term potential of the third-generation semiconductor industry,” comments Shen Bo.
“TWINSCAN lithography is verified for the first time in the field of 8-inch GaN-on-Si power semiconductor wafers,” notes Ron Kool, executive VP of ASML’s DUV business line. “We are fully confident to support Innoscience’s continued growth in the future.”
