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15 January 2021

EPC’s eGaN FETs used in MPS’ 48V–6V digital DC-DC power conversion modules

Monolithic Power Systems Inc (MPS) of Kirkland, WA, USA has launched a family of 48V–6V digital DC-DC power modules for 48V data center solutions that use enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) from Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA. The power modules target applications for high-density computing and data centers, artificial intelligence (AI), machine learning, and multi-user gaming.

The MPC1100-54-0000 is the first in the new product family that will include modules in an LLC topology that utilize eGaN FETs to achieve an overall efficiency above 97% in a footprint of just 27mm x 18mm x 6mm for 48V–6V conversion. A key advantage of 48V–6V front-end conversion includes the enabling of a high-frequency secondary stage that is small enough to be placed much closer to the xPU/ASIC/GPU to reduce the power distribution loss by 4x compared with the commonly used STC topology for 48V–12V conversion.

For high-density server applications, record power density and efficiency can be achieved with simple, low-cost topologies such as an LLC DC-DC converter. EPC says that eGaN FETs are well suited to LLC converters due to their combined low gate charge with 5V gate operation that yields very low gate power consumption, ultra-low on-resistance, and low output capacitance charge.

With power levels ranging from 300W to 1000W, the modules are scalable to accommodate a range of high-current and high-power applications. Customers can add up to three modules to address higher-power requirements, or scale down to one or two modules for lower-power requirements.

“The 48V–6V module family offers an extremely powerful and versatile solution set for high-performance computing, high-density data centers, and artificial intelligence systems migrating to the 48V power distribution architecture,” says Maurice Sciammas, senior VP marketing & sales, MPS. “With the EPC devices inside our modules, we can increase power density significantly to meet the demanding requirements of these advanced applications,” he adds.

“Advanced computing applications are putting higher demands on power converters, and silicon-based power conversion is not keeping pace,” says EPC’s CEO Alex Lidow. “We are delighted to work with MPS, a leader in this space, to implement GaN into their modules, allowing customers to increase the efficiency, shrink the size, and reduce system cost for 48V power conversion.”

Tags: EPC E-mode GaN FETs Power electronics

Visit: www.monolithicpower.com

Visit: www.epc-co.com

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