AES Semigas


8 January 2021

ST extends MasterGaN family

STMicroelectronics of Geneva, Switzerland says that, building on its MasterGaN platform, MasterGaN2 is the first in the new family to contain two asymmetric gallium nitride (GaN) transistors, delivering an integrated GaN solution suited to soft-switching and active-rectification converter topologies.

The 650V normally-off GaN transistors have on-resistance (RDS(on)) of 150mΩ and 225mΩ. Each is combined with an optimized gate driver, making GaN technology as easy to use as ordinary silicon devices, says ST. By combining advanced integration with GaN’s inherent performance advantages, MasterGaN2 further extends the efficiency gains, size reduction and weight savings of topologies such as active clamp flyback, the firm adds.

The MasterGaN power system-in-package (SiP) family combines the two GaN high-electron-mobility transistors (HEMTs) and associated high-voltage gate drivers in the same package with all necessary protection mechanisms built-in. The designer can connect external devices including Hall sensors and a controller such as a DSP, FPGA or microcontroller directly to the MasterGaN device. The inputs are compatible with logic signals from 3.3V to 15V, which helps to simplify the circuit design and bill of materials, permits a smaller footprint, and streamlines assembly, says ST. This integration helps to raise the power density of adapters and fast chargers.

GaN technology is driving the evolution toward fast USB-PD adapters and smartphone chargers. ST reckons that MasterGaN devices enable these to become up to 80% smaller and 70% lighter, while charging three times faster compared with ordinary silicon-based solutions.

The built-in protection comprises low-side and high-side under-voltage lockout (UVLO), gate-driver interlocks, a dedicated shutdown pin, and over-temperature protection. The 9mm x 9mm x 1mm GQFN package is optimized for high-voltage applications, having over 2mm creepage distance between high-voltage and low-voltage pads.

MasterGaN2 is in production now, priced from $6.50 for orders of 1000 pieces.

See related items:

ST launches first silicon-based driver and GaN transistors integrated in one package

ST and TSMC collaborate to accelerate market adoption of GaN-based products

Tags: STMicroelectronics