News: Suppliers
6 January 2021
Taiyo Nippon Sanso MOCVD equipment division wins industry award
Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan says that its metal-organic chemical vapor deposition (MOCVD) equipment division for gallium nitride (GaN) and aluminium nitride (AlN) devices has received the 2020 Industry Award from The Japan Society of Vacuum and Surface Science.
The award is presented annually by The Japan Society of Vacuum and Surface Science to recognize significant contributions to the advancement and development of the surface and vacuum science-related industries.
TNSC has been developing MOCVD compound semiconductor production equipment since 1983, and has delivered more than 500 MOCVD equipment systems to manufacturers and research institutions in Japan and abroad.
In 2015, TNSC developed the SR4000HT reactor model for high-Al-content aluminium gallium nitride (AlGaN) ultraviolet (UV) light-emitting devices. The SR4000HT allows AlGaN film to be deposited at a high temperature (greater than 1300°C). Processes for UV LED epitaxial wafers with high luminous efficiency have been demonstrated.
In 2012, TNSC introduced the UR26K reactor model, a large-scale mass-production platform that can process 8-inch substrates. High-performance mass production of GaN high-electron-mobility transistors (HEMTs) on 8-inch silicon substrates has been demonstrated. The UR series reactors optimize film properties and productivity by reducing the operating time and supporting cleaning technology for reactor components.
TNSC says that it aims to continue to promote environmental and energy conservation initiatives in the industry by introducing new technologies and products.
