AES Semigas

IQE

15 June 2021

Fairview launches GaN-based input-protected LNAs

Fairview Microwave Inc of Lewisville, TX, USA (an Infinite Electronics brand that provides on-demand RF, microwave and millimeter-wave components) has unveiled a new series of low-noise amplifiers (LNAs) suitable for use in electronic warfare (EW), radar, space systems, R&D, prototype/proof-of-concept, electronic countermeasures (ECM), microwave radio, VSAT, SATCOM, and test & measurement applications.

The new series of input-protected LNAs feature gallium nitride (GaN) technology, which provides robust input power protection. GaN ensures what is claimed to be an excellent power-to volume ratio that is suitable for broadband high-power applications.

The amplifiers also feature significantly higher breakdown voltage that allows for higher toleration of RF input power signal levels while maintaining excellent low noise figure performance. This is possible without the need for an input protective limiter circuit that is required for other semiconductor technologies and could contribute to higher noise figure levels.

The new input-protected LNAs cover desirable microwave and mm-wave frequency bands. Additional features include high gain up to 46dB typical, high RF input power handling up to 10W CW, broadband frequencies of 1-23GHz and noise figures as low as 1.5dB typical. The LNAs also have rugged, mil-grade compact coaxial designs, what is claimed to be excellent thermal properties, and SMA connectors.

“RF designers will find these industry-leading, state-of-the-art, GaN LNAs extremely useful in receive chains that may be sensitive to higher RF input signal conditions,” says senior product line manager Tim Galla.

Fairview Microwave’s new input-protected LNAs are in-stock and available for immediate shipping with no minimum order quantity (MOQ) required.

Tags: power amplifier

Visit: www.fairviewmicrowave.com/rf-products/

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