AES Semigas


3 June 2021

GeneSiC launches Gen5 650V SiC Schottky MPS rectifiers

Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the availability of its 5th generation (GE*** series) SiC MPS merged-PiN-Schottky diode rectifiers.

Claiming superior price-performance index and industry-leading surge current and avalanche robustness, the new devices are targeted at meeting the high efficiency and power density goals in applications such as: boost diodes in power factor correction (PFC); server and telecom power supplies; solar inverters; uninterruptible power supplies (UPS); battery chargers; and freewheeling/anti-parallel diodes in inverters.

“GeneSiC was one of the first SiC manufacturers to commercially supply SiC Schottky rectifiers in 2011,” says Dr Siddarth Sundaresan, VP of technology. The low built-in voltage (knee-voltage) of the new devices enables low diode conduction losses under all load conditions – crucial for applications demanding high-efficiency energy usage. “In contrast to other competitor SiC diodes also designed to offer low-knee characteristics, an additional feature of our Gen5 diode designs is that they still maintain that high level of avalanche (UIL) ruggedness that our customers have come to expect from GeneSiC’s Gen3 (GC*** series) and Gen4 (GD*** series) SiC Schottky MPS,” he adds.

See related items:

GeneSiC launches third-generation 1200V SiC MOSFETs

Tags: GeneSiC