News: Microelectronics
21 June 2021
Microchip adds first MMIC to GaN RF portfolio
Satellite communication systems use complex modulation schemes to achieve the fast data rates required to deliver video and broadband data. To attain this, they must deliver high RF output power while simultaneously ensuring the signals retain their desired characteristics. Microchip Technology Inc of Chandler, AZ, USA says that its new GMICP2731-10 gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier (available now in volume production) can help to meet both of these requirements.
The new device, Microchip’s first GaN MMIC, is designed for use in commercial and defense satellite communications, 5G networks and other aerospace & defense systems.
Fabricated using GaN-on-silicon carbide (SiC) technology, the GMICP2731-10 delivers up to 10W of saturated RF output power across the 3.5GHz of bandwidth between 27.5GHz and 31GHz. Its power-added efficiency (PAE) is 20%, with 22dB of small-signal gain and 15dB of return loss. A balanced architecture allows the GMICP2731-10 to be well matched to 50Ω and includes integrated DC blocking capacitors at the output to simplify design integration.
“As communication systems employ complex modulation schemes such as 128-QAM and as the power of solid-state power amplifiers (SSPAs) trends ever upwards, RF power amplifier designers have the difficult challenge of finding higher-power solutions while at the same time reducing weight and power consumption,” notes Leon Gross, VP of Microchip’s Discrete Products Group business unit. “GaN MMICs used in high-power SSPAs can achieve greater than 30% lower power and weight as compared to their GaAs [gallium arsenide] counterparts, which is a huge gain for satellite OEMs,” he adds. “This product delivers on the promise of GaN and enables the size, weight, power and cost OEMs are searching for.”
The GMICP2731-10 complements Microchip’s existing portfolio of GaAs MMIC RF power amplifiers, switches, low-noise amplifiers, and Wi-Fi front-end modules, as well as GaN-on-SiC high-electron-mobility transistor (HEMT) driver and final amplifier transistors for radar systems.
To help with design-ins, Microchip provides board design support, as do the firm’s distribution partners. The company also provides compact models for the GMICP2731-10, which allow customers to model the performance and expedite the design of the power amplifier in their systems more easily.
