AES Semigas


11 March 2021

GaN Systems and Silanna release 65W ACF GaN charger reference design

GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has announced a new reference design for the highest-power-density, high-efficiency GaN-based 65W Active Clamp Flyback (ACF) charger in collaboration with Silanna Semiconductor of San Diego, CA, USA, which makes AC/DC and DC/DC power converter ICs. The reference design is now available at Silanna and provides an easy design for ACF USB-C PD GaN chargers, reducing design cycles and product time to market for customers, GaN Systems says.

The solution removes the difficulties of an ACF topology design, which typically has two transistors in the high-side and in low-side configuration. The new charger reference design uses Silanna’s SZ1130 ACF Pulse Width Modulator (PWM) controller and GaN Systems’ GS-065-008-1-L 650V GaN power transistor, with the high-side FET integrated into the controller. GaN Systems says that this design results in lower bill of materials (BoM) costs by using a conventional RM8 transformer and 100V SR MOSFET on the secondary side.

Key benefits and features include:

  • ultra-high density (30W/in3 no case);
  • high efficiency (>94%, peak);
  • low temperature (<95°C maximum component temperature);
  • better EMI design (clean waveforms with almost zero voltage spike or ringing); and
  • support for a wide range of applications (5V/3A, 9V/3A, 15V/3A and 20V/3.25A output voltages; USB-PD).

“Silanna Semiconductor’s SZ1130 chip is a great fit for 65W ACF designs and is another example of a company developing an innovative solution in recognition of the growing importance of GaN to power engineers,” says GaN Systems’ CEO Jim Witham. “As GaN becomes the standard building block across markets, it’s good to see that the ecosystem continues to grow.”

Tags: GaN Systems




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