AES Semigas


4 May 2021

Infineon launches CoolGaN IPS family for 30-500W power range

Infineon Technologies AG of Munich, Germany has added to its portfolio of wide-bandgap (WBG) power devices by launching the CoolGaN IPS family of integrated power stage (IPS) products. The initial IPS portfolio consists of half-bridge and single-channel products, targeting low- to medium-power applications, including chargers and adapters and switched-mode power supplies (SMPS).

The 600V CoolGaN half-bridge IPS IGI60F1414A1L is suitable for compact and lightweight designs in the low- to medium-power range. Coming in a thermally enhanced 8x8 QFN-28 package, it enables systems with very high power density. The product combines two 140mΩ/600V CoolGaN e-mode HEMT switches with dedicated galvanically isolated high- and low-side gate drivers out of Infineon’s EiceDRIVER family.

Infineon’s new 600V CoolGaN half-bridge IPS IGI60F1414A1L.

Picture: Infineon’s new 600V CoolGaN half-bridge IPS IGI60F1414A1L.

The IGI60F1414A1L is easy to control due to the isolated gate driver with two digital PWM inputs. The integrated isolation function, the clean separation of digital and power ground and the reduced complexity of the PCB layout are crucial in achieving shorter development time, lower system bill-of-material and lower total cost. The gate driver’s input-to-output isolation is based on Infineon’s proven on-chip coreless transformer (CT) technology. The firm says that this guarantees high speed and excellent robustness even for extremely fast switching transients with voltage slopes exceeding 150V/ns.

The switching behavior of IGI60F1414A1L can be easily adapted to the needs of different applications by means of a few passive gate path components. This allows optimization of slew rate, for example, to reduce electromagnetic interference (EMI) efforts, steady-state gate current setting, and negative gate drive for robust operation in hard-switched applications.

Furthermore, due to the system-in-package integration and the highly accurate and stable propagation delay of the gate drivers, the IGI60F1414A1L enables the lowest possible system dead-times. This helps to maximize system efficiency, leading to the next level of power density up to 35W/in3 for charger and adapter solutions. Flexible, easy and fast designs are also enabled for other applications, including LLC resonant topology and motor drives.

The IGI60F1414A1L is available in a thermally enhanced 8x8 QFN-28 package and can be ordered now.

The 600V CoolGaN IPS half-bridge is being showcased at Infineon’s Virtual Power Conference (available live, 4-6 May), which complements the PCIM Europe (Power Conversion and Intelligent Motion) Digital Days event.

See related items:

Infineon adds 400V and 600V devices to CoolGaN portfolio

Tags: Infineon