AES Semigas


5 May 2021

ON Semi launches new-generation 1200V SiC diodes at PCIM

During the 2021 PCIM Europe (Power Conversion and Intelligent Motion) Digital Days event, power semiconductor IC supplier ON Semiconductor of Phoenix, AZ, USA has introduced new automotive (AECQ101)- and industrial-grade-qualified next-generation 1200V silicon carbide (SiC) diodes, suitable for high-power applications such as electric vehicle (EV) charging stations and solar inverters, uninterruptible power supplies (UPS), EV on-board chargers (OBC) and EV DC-DC converters.

Due to a smaller die size and lower capacitance, the new design improves on the first-generation SiC diodes. The NVDSH20120C, NDSH20120C, NVDSH50120C and NDSH50120C deliver a lower drop in forward voltage and a 4x increase in rated current, with a higher rate of change (di/dt) of 3500A/┬Ás. The smaller die size also yields a 20% lower thermal resistance in an F2 package.

Tags: Schottky barrier diodes