News: Microelectronics
4 November 2021
Navitas’ co-founder & COO/CTO giving keynote at IEEE WiPDA
Gallium nitride (GaN) power integrated circuit firm Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland says that its co-founder & chief operating officer/chief technology officer Dan Kinzer is hosting a keynote session at the IEEE WiPDA (Wide Bandgap Power Devices & Applications) virtual workshop (7-11 November).
Sponsored by the IEEE Power Electronic Society (PELS), the IEEE Electron Devices Society, and the Power Sources Manufacturers Association (PSMA), the eighth annual IEEE WiPDA workshop provides a forum for device scientists, circuit designers and application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience and potential applications. During the Navitas keynote, broadcast at 08.30am on 8 November, Kinzer will update the audience on how innovations in GaN power ICs are driving improvements in efficiency, reliability and autonomy.
Navitas’ GaNFast power ICs use GaN to replace legacy silicon chips and enable up to 3x faster charging and 3x more power in half the size and weight for mobile fast chargers, consumer electronics, solar, data centers and electric vehicles (EVs) in a market forecasted to be worth over $13bn by 2026.
“The organizing committee is privileged to invite exceptional keynote speakers of industry leaders from large semiconductor manufacturers, dynamic and fast-emerging start-ups, academia and national research laboratories,” comments WiPDA 2021’s general chair Dr Sameh G. Khalil. “We wanted this key component of WiPDA 2021 to highlight the vision and the direction that industry leaders are projecting, share their high-level roadmaps and their plans for the future,” he adds.
“As well as enabling efficiency improvements that reduce the carbon emissions of target applications, small die-size, fewer manufacturing process steps and integrated functionality mean that GaNFast power ICs have up to 10x lower CO2 footprint than silicon chips and save 4kg of CO2 per IC shipped when compared to legacy silicon systems,” says Kinzer.
Kinzer’s 40-year career led to him being inducted into the International Symposium on Power Semiconductor Devices and ICs (ISPSD) inaugural Hall of Fame in 2018. His experience includes developing advanced power device and IC platforms, wide-bandgap GaN and SiC device design, IC and power device fabrication processes, advanced IC design, semiconductor package development and assembly processes, plus the design of electronic systems. Kinzer holds over 130 US patents, and a BSE degree in Engineering Physics from Princeton University.
