AES Semigas


30 November 2021

Navitas drives Xiaomi’s new ultrafast-charging Note 11 Pro+ smartphone

Gallium nitride (GaN) power integrated circuit firm Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland says that its GaNFast power ICs with GaNSense technology are being used to ultrafast-charge Xiaomi’s new Note 11 Pro+ flagship smartphone. The worldwide launch of Navitas’ GaNSense technology was held recently, on 14 November, at the China Power Supply Society's (CPSS) Conference in Shanghai.

Xiaomi’s power management and graphene Li-ion battery technology allows ultrafast-charging, with a powerful 120W capability to charge the 4500mAhr battery from 0-100% in only 17 minutes. GaNSense technology delivers what is claimed to be the smallest, most efficient, most portable 120W charger to enable this performance.

Founded in 2014, Navitas introduced what it claimed to be the first commercial GaN power integrated circuits. Its proprietary GaNFast power ICs monolithically integrate GaN power field-effect transistors (FETs) and GaN drive plus control and protection circuits in a single SMT package. Since GaN is reckoned to run up to 20x faster than silicon, GaNFast power ICs are said to deliver up to 3x faster charging or 3x more power in half the size and weight, and with up to 40% energy savings compared with silicon chips.

New GaNSense technology delivers another 10% energy saving plus autonomous system-parameter sensing and high-speed protection features for maximum reliability. This enables the GaN power IC to detect and protect in less than 30ns.

The Xiaomi 120W measures only 55mm x 55mm x 28.4mm (86cc), weighs just 138g and achieves what is claimed to be an industry-leading power density of 1.4W/cc. Two NV6134 GaNFast power ICs with GaNSense technology are used in the 120W charger: one in the front-end boost power-factor correction (PFC) section, and the other in the downstream high-frequency quasi-resonant (HFQR) DC-DC stage, utilizing a high-speed, low-profile planar transformer.

“These ultra-fast chargers require double the GaN content per charger, which of course doubles the revenue opportunity for Navitas,” notes Charles Zha, VP & general manager of Navitas China. “By our estimates, we project this ultra-fast charger category will represent up to half of the GaN potential in mobile chargers over the next few years.”

See related items:

Navitas presents at 2021 Xiaomi Portfolio Demo Day

Xiaomi launches third fast-charger based on Navitas’ GaNFast power ICs

Navitas’ GaNFast power IC used in Xiaomi’s 55W fast charger

Tags: GaN Power electronics


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