News: Microelectronics
22 November 2021
SEI launches high-power GaN devices for X-band radar
Japan’s Sumitomo Electric Industries Ltd and its group company Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA, a provider of radio frequency (RF), wireless and optical communications solutions, has introduced its line of high-power gallium nitride (GaN) products for X-band radar applications.
Next-generation X-band radars face significant size, weight, power and cost (SWAP-C) challenges, notes the firm. Among the challenges are the RF power amplifier designs used in these radar systems.
Since GaN provides very high power and bandwidth that improves performance and is a proven and reliable technology for radar applications, Sumitomo Electric has hence developed a line of high-power GaN X-band devices that enable RF solid-state power amplifiers to meet the SWAP-C challenges of these new radars while also improving reliability versus tube amplifiers.
The new product line comprises five new X-band GaN devices (with efficiencies of 37-38%):
- the 8.5-9.5GHz SGC8595-300B-R (with output power of 270W below 9.17GHz and 235W above 9.17GHz, and gain of 8.3dB below 9.17GHz and 7.7dB above 9.17GHz) in a hermetic metal/ceramic flange mount package;
- the 9.0-10.0GHz SGC0910-300B-R (with output power of 270W below 9.6GHz and 235W above 9.6GHz, and gain of 8.3dB below 9.6GHz and 7.7dB above 9.6GHz) in a hermetic metal/ceramic flange mount package;
- the 9.8-10.5GHz SGC1011-300B-R (with output power of 250W below 10.3GHz and 235W above 10.3GHz, and gain of 8.0dB below 10.3GHz and 7.4dB above 10.3GHz) in a hermetic metal/ceramic flange mount package;
- the 9.2-9.5GHz SGM6906VU (with output power of 43.7W, and gain of 21.4dB) in a hermetically sealed SMT package;
- the 8.5-10.1GHz SGM6901VU (with output power of 24W below 10.1GHz and 21.4W above 10.1GHz, and gain of 23.3dB) in a hermetically sealed SMT package.
