AES Semigas


26 November 2021

ST and A*STAR’s IME team on silicon carbide R&D for automotive and industrial power electronics

The Institute of Microelectronics (IME) at Singapore’s Agency for Science, Technology and Research (A*STAR) and STMicroelectronics (ST) of Geneva, Switzerland have started an R&D collaboration on silicon carbide (SiC) for power electronics applications in automotive and industrial markets. A*STAR reckons that the collaboration sets a foundation for a comprehensive SiC ecosystem in Singapore and creates opportunities for other companies to engage with IME and ST in SiC research.

Since SiC solutions can outperform conventional silicon devices in power electronics for electric vehicles (EVs) and industrial applications in meeting the need for power modules with smaller form factors or higher power outputs (as well as higher-temperature operation), IME and ST aim to develop and optimize SiC integrated devices and package modules to offer significantly better performance in next-generation power electronics.

“Such efforts will continue to anchor high-value R&D activities in Singapore and bolster its reputation as an attractive regional hub for research, innovation and enterprise,” reckons professor Dim-Lee Kwong, IME’s executive director.

“This new collaboration with IME encourages the growth of a silicon carbide ecosystem in Singapore, as we ramp up our manufacturing activities there in addition to Catania (Italy),” says Edoardo Merli, Power Transistor Macro-Division general manager and VP of STMicroelectronics’ Automotive and Discrete Group. “The multi-year collaborative effort helps us scale up our global R&D effort across our existing programs managed out of Catania and Norrköping (Sweden), covering the entire SiC value chain,” he adds. “IME’s strong knowledge and expertise in wide-bandgap materials, and notably SiC, supports us in accelerating the development of new technologies and products addressing the challenges of sustainable mobility and better energy efficiency in a wide spectrum of applications.”

See related items:

ST manufactures its first 200mm silicon carbide wafers

ST to design, develop and make SiC- and GaN-based transistors, packages and modules for Renault

Tags: STMicroelectronics A*STAR Power electronics SiC devices



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