AES Semigas


27 October 2021

EPC adds 40V, 1.3mΩ eGaN FET for high-power-density telecom, netcom and computing solutions

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has expanded the selection of low-voltage, off-the-shelf GaN transistors with the launch of the EPC2067 (1.3mΩ typical, 40V) eGaN FET.

The EPC2067 is suitable for applications with demanding requirements for high-power-density performance, including 48V–54V input servers. Lower gate charges and zero reverse recovery losses enable high-frequency operation of 1MHz and beyond at high efficiency in a 9.3mm2 footprint for state-of-the-art power density.

“The EPC2067 makes the ideal switch for the secondary side of the LLC DC-DC converter from 40V–60V to 12V,” says co-founder & CEO Alex Lidow. “This 40V device offers improved performance and cost compared with previous-generation 40V GaN FETs, allowing designers to economically improve efficiency and power density.”

The EPC90138 development board is a 40V maximum device voltage, 40A maximum output current, half-bridge with onboard gate drives, featuring the EPC2067 eGaN FETs. The 2” x 2” (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2067.

The EPC2067 eGaN FET is priced at 1000 u/reel at $2.69 each. The EPC90138 development board is $123.75. Both the EPC2067 and EPC90138 are available to order for immediate delivery from distributor Digi-Key Corp.

See related items:

EPC adds 40V, 1.6mΩ eGaN FET for high-power-density telecom, netcom and computing solutions

Tags: EPC E-mode GaN FETs