AES Semigas


14 September 2021

Tagore launches 10-100W second-generation RF switches

Tagore Technology Inc – which was founded in January and has design centers in Arlington Heights, IL, USA and Kolkata, India developing gallium nitride-on-silicon (GaN-on-Si) technology for RF and power management applications – has launched a family of second-generation RF switches with 10-100W of average power. The TS8x family of products is best suited for post-power amplifier (PA) harmonics filter switching for tactical and military communications (MilCom), land mobile radios (LMR) and private mobile radios (PMR).

Lower insertion loss performance significantly reduces power consumption and enhances the battery life of handheld communication devices, the firm says. Lower power dissipation also helps to ease thermal management requirements to reduce the size, weight and power (SWaP) of the overall system.

“Tagore’s TS8x family of switches enables customers to replace all traditional PIN diode-based switches that require many passive components and high-voltage bias supply to save significant board space and overall cost, and simplify RF front end design,” says chief sales & marketing officer Klaus Buehring.

The new family of products is pin- and footprint-compatible with existing products, allowing existing customers to enhance radio performance by switching to the latest generation of products.

Tags: GaN on silicon



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