AES Semigas


26 April 2022

EPC showcasing GaN for power delivery and advanced autonomy at PCIM

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – is delivering multiple technical presentations on GaN technology and applications at PCIM Europe 2022 in Nuremburg (10–12 May). In addition, in Hall 9, Stand 113, the firm is demonstrating its latest eGaN FETs and ICs in a large variety of customer end products.

48V DC-DC power conversion for vehicle electrification

48V automotive systems boost fuel efficiency by ~10-15% (delivering 4x the power without increasing engine size) and reduce carbon dioxide emissions by 25%. EPC will demonstrate how GaN enables 2kW bidirectional converters that increase efficiency, shrink the size, and reduce system costs for the next generation of mild hybrid and electric vehicles.

Advanced autonomy

Autonomous vehicles create new possibilities for mobility, safety and efficiency. eGaN FETs and ICs provide the short pulse widths needed for higher-resolution light detection & ranging (LiDAR) that enable autonomy, and the higher pulse current to extend the range of LiDAR systems. LiDAR systems with GaN can see further, faster and better. EPC’s booth is exhibiting multiple GaN-based solutions for both short- and long-range LiDAR applications.


GaN-based motor drives allow various applications such as warehouse autonomous robots, eMobility and drones to reduce size and weight, extend range and increase reliability. At PCIM, EPC will have examples of GaN-based motors capable of driving everything from ebikes to city cars.

GaN integration

EPC’s GaN experts will be available to discuss the latest progress and roadmaps for GaN integration. Visitors can work live with the web-based design tools available in the GaN Power Bench to accelerate their design cycles.

EPC is giving the following technical presentations featuring GaN FETs and ICs:

10 May

  • ‘Exceeding 5kW/in3 Power Density in a 48V to 12V LLC Resonant DC-DC Bus Converter Using GaN FETs’, by Michael de Rooij Ph.D.;
  • ‘Experimental Evaluation of Dead-Time Reverse Conduction Losses in Motor Drive Applications’, by Marco Palma;
  • ‘Exhibitor Forum: Extending GaN Integration to Higher Power and Faster Speeds’, by Alex Lidow Ph.D.

11 May

  • ‘Bodo’s Power Panel: The Next level of Wide Bandgap Design – GaN’, panelist Alex Lidow Ph.D.

12 May

  • ‘eMobility Forum: eGaN Mobility – How GaN FETs and ICs Enable eMobility Solutions that are Sleeker, Lighter, and Faster’, Alex Lidow Ph.D.

Tags: EPC E-mode GaN FETs