AES Semigas


14 April 2022

EPC Space launches 4mΩ, 40V rad-hard GaN power transistor

EPC Space LLC of Haverhill, MA, USA has launched the EPC7019G, a 40V, 4mΩ, 530Apulsed radiation-hardened enhancement-mode gallium nitride (GaN) power transistor that is claimed to be lower in cost and a more efficient solution than the nearest comparable rad-hard (RH) silicon MOSFET.

The EPC7019G has a total dose rating greater than 1Mrad and SEE (single event effect) immunity for LET (linear energy transfer) of 85MeV/(mg/cm2). These devices come in a new compact hermetic package with dual gate in a footprint less than 45mm2. Chip-scale versions of the device are available from EPC.

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies, resulting in higher power densities, higher efficiencies, and more compact and lighter-weight circuitry for critical space-borne missions, notes the firm.

Applications benefiting from the performance of these products include power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes.

“The EPC7019G is the lowest on-resistance of any packaged rad-hard transistor currently on the market,” claims CEO Bel Lazar. “This device offers a mission-critical component with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad-hard silicon solutions”.

In 500-unit quantities, pricing is $212 each for engineering models and $315 each for space-level grade.

See related items:

EPC releases lowest on-resistance rad-hard transistor available for demanding space applications

EPC Space launches cost-effective 60V rad-hard GaN power device

Tags: EPC


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