7 April 2022
Taiyo Nippon Sanso and RIKEN demo 226nm AlGaN-based DUV LED electroluminescence
Tokyo-based Taiyo Nippon Sanso Corp (TNSC) and Japan’s Institute of Physical and Chemical Research (RIKEN) in Saitama have demonstrated aluminium gallium nitride (AlGaN) deep ultraviolet (DUV) LED electroluminescence (EL) at a short wavelength of 226nm using TNSC’s metal-organic chemical vapor deposition (MOCVD) equipment.
AlGaN-based deep ultraviolet LEDs with emission wavelengths of 220-350nm are applicable in a wide range of fields including sterilization, disinfection and medical applications. TNSC and RIKEN have conducted joint research for deep ultraviolet LED epitaxial growth and device efficiency improvement. Previously, 280nm emission wavelength was demonstrated using a TNSC SR4000HT MOCVD system in 4-inch wafer configuration. Now, EL emission with a short wavelength of 226nm has been report using the TNSC SR4000HT system in 3 x 2-inch wafer configuration.
Figure 1. EL emission spectrum of deep ultraviolet LED.
Figure 1 shows the EL emission spectrum at each wavelength, shortening from 286nm, and showing that an EL emission spectrum was obtained even at 226nm.
Figure 2. Relationship between Al composition and emission wavelength.
Figure 2 shows the relationship between the aluminium composition and each wavelength, indicating that the emission wavelength changes linearly with respect to Al composition.