AES Semigas


19 August 2022

Shanghai-based Eta moving HQ to Tongling in September

Eta Research of Shanghai, China is moving in September to its new headquarters in Tongling, Anhui Province, after beginning construction on the new factory in 2017.

Founded in 2015, the firm first offered 2” and 4” gallium nitride (GaN) wafers to customers in 2020 and is currently focused on the development and production of free-standing GaN wafers. Developed at the Shanghai site, the GaN wafer production process includes self-developed hydride vapor phase epitaxy (HVPE) growth equipment, wafer separation method, and GaN wafer polishing. The firm offers n-type GaN wafers for LEDs, laser diodes, and power devices. Semi-insulating GaN wafers are available for lateral GaN RF devices.

Eta Research’s new headquarters in Tongling.

Picture: Eta Research’s new headquarters in Tongling.

Housing the entire production process (including HVPE for GaN growth and polishing equipment for GaN wafers), the new 17,000m2 Tongling factory will be the site for both GaN wafer production and R&D. The fully built-out production capacity will exceed several thousand wafers per month.

See related items:

Eta unveils GaN wafers for laser diode manufacturing

Eta demos GaN-on-GaN epitaxy of vertical power device structures

Eta develops 4” semi-insulating GaN wafers

Eta launches polished epi-ready 100mm n-type GaN wafers

Eta Research develops free-standing GaN substrates

Tags: HVPE GaN substrates