AES Semigas


23 August 2022

Infineon signs multi-year supply agreement for II-VI’s silicon carbide wafers

Infineon Technologies AG of Munich, Germany has signed a multi-year supply agreement for silicon carbide (SiC) wafers from II-VI Inc of Saxonburg, PA, USA. Infineon’s aim is to secure further access to silicon carbide to meet the strong increase in customer demand in this sector, and to supports its multi-sourcing strategy and increase its supply chain resilience. The first deliveries have already taken place.

Infineon claims that its CoolSiC brand is already the industry’s largest portfolio of devices for industrial power semiconductor applications. In addition to photovoltaic converters and industrial power supplies, SiC power semiconductors are also used particularly in e-mobility, e.g. in the main inverters for e-vehicle drive trains, in onboard battery charging units and in charging infrastructures, as the material meets the highest quality standards for industrial and automotive applications. As strategic partners, II-VI and Infineon are also collaborating on the transition to 200mm-diameter SiC wafers.

“SiC compound semiconductors set new standards in power density and efficiency. We are leveraging them to deliver on our strategy of decarbonization and digitalization,” says Infineon’s chief procurement officer Angelique van der Burg. “Infineon is increasing investments in its SiC manufacturing capacity to meet the rapidly growing demand from our customers,” she adds.

“Infineon, as a market leader in power semiconductors, is an important partner for us,” says Sohail Khan, executive VP, New Ventures & Wide-Bandgap Electronics Technologies at II-VI. “Our highly specialized products are now helping Infineon provide innovative electronic components to key customers worldwide.”

Infineon expects its SiC semiconductor sales to grow by more than 60% on average per year, reaching about $1bn by mid-decade. For the second half of the decade, the firm expects on-going growth momentum, for which it is investing in its recently announced additional manufacturing block in Kulim, Malaysia.

See related items:

Infineon lays foundation of third wafer fab module in Kulim, Malaysia

II-VI accelerates 150-200mm SiC substrate and epi manufacturing expansion

Tags: II-VI Inc SiC substrates Infineon



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