AES Semigas

IQE

9 August 2022

Navitas powers OnePlus’ first in-box GaN smartphone charger

Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland says that its gallium nitride (GaN) power integrated circuit technology has been used by global mobile technology company OnePlus for the 160W in-box fast charger supplied with its latest OnePlus 10R 5G (worldwide) and OnePlus ACE 5G (China model) Android smartphones.

The new OnePlus 10R/ACE 5G features a MediaTek Dimensity 8100-Max chipset, a 6.7” AMOLED display supporting a 120Hz refresh rate, and a 50MP main camera. Its 4500mAhr battery offers 150W SuperVOOC fast charging and the ‘in-box’ 160W charger allows user to take their phone’s battery from 1-30% in just three minutes, and 1-100% in only 17 minutes.

This is the first time that OnePlus has offered an in-box GaN charger. Built around Navitas GaNFast ICs, the unit measures just 58mm x 57mm x 30mm, giving it a power density of over 1.6W/cc. GaNFast ICs integrate GaN power with drive, control, protection and sensing to enable 3x faster charging with up to 40% energy saving in only half the size and weight, compared with legacy silicon solutions. The 160W charger uses an NV6125 GaN power IC for the high-frequency boost power factor correction (PFC), followed by a high-frequency quasi-resonant (QR) flyback converter.

“Thanks to the close collaboration with Navitas we have created an in-box charger that can take full advantage of the fast-charging capability of the OnePlus 10R/ACE 5G Endurance Edition,” says OnePlus’ chief operating officer Kinder (Fengshuo) Liu. “The key to making the breakthrough in terms of size, weight and charging speed is the GaNFast power IC technology. We expect to continue our in-depth collaboration with Navitas,” he adds.

Tags: GaN Power electronics

Visit: www.navitassemi.com

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