News: Microelectronics
1 December 2022
ROHM and BASiC partner on silicon carbide power devices for automotive applications
In a signing ceremony at its headquarters in Kyoto, Japan-based power semiconductor device maker ROHM Co Ltd has entered into a strategic partnership agreement with China’s Shenzhen BASiC Semiconductor Ltd on silicon carbide (SiC) power devices for automotive applications.
BASiC has shipped more than 20 million SiC power devices to over 600 customers worldwide for applications including electric vehicles (EVs), solar power generation, energy storage systems, telecom power supplies, servers, charging stations, and consumer electronics.
The two firms aim to leverage their respective strengths to innovate and improve the performance of SiC power devices and develop higher-performing, more efficient and reliable SiC solutions for new energy vehicles.
The first step involves supplying onboard power modules that leverage the combined technologies to several major automakers for use in electric vehicle powertrains. Also, going forward, both ROHM and BASiC aim to contribute to technological innovation in the automotive sector by accelerating the development of power solutions centered on SiC.
Picture: BASiC’s general manager Weiwei He (right) and ROHM’s president & CEO Isao Matsumoto (left) at the signing ceremony.
“Amid the undergoing technological revolution of new energy vehicles, the emergence of SiC power devices stands out as the key to improving electric drive efficiency,” notes BASiC’s general manager Weiwei He. “BASiC Semiconductor’s early involvement in the automotive SiC power module business has led to breakthroughs in both product and market development,” he adds. “We are honored to work with ROHM, an internationally renowned semiconductor manufacturer, to develop high-performance, high-reliability automotive SiC power devices that meet customer needs and contribute to innovation in electric vehicle technology while reducing CO2 emissions.”
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