AES Semigas


16 December 2022

TI’s half-bridge GaN FET with integrated gate driver used in Chicony’s 65W laptop power adapter

Dallas-based Texas Instruments Inc (TI) — which designs, manufactures and tests analog and embedded processing chips for markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems — says that Chicony Power has designed in its integrated gallium nitride (GaN) technology to power its latest 65W laptop power adapter, Le Petit. Leveraging TI’s half-bridge GaN FET with integrated gate driver, LMG2610, Chicony Power and TI collaborated on a design to reduce the size of Chicony's power adapter by 50% and increase efficiency up to 94%.

As a power supply provider committed to improving power conversion efficiency in electronic power designs, Chicony Power has worked closely with international IC companies, providing them with market and technical requirements to help develop solutions in new designs. For the Le Petit laptop adapter design, Chicony Power teamed up with TI for its expertise in high-voltage design and its integrated GaN technology. TI’s LMG2610 is designed to be paired with the UCC28782 active clamp flyback (ACF) controller to create an easy-to-use, high-efficiency and high-power-density solution for AC/DC designs under 75W.

Improving power conversion efficiency

Increasingly, consumers seek smaller, lighter electronics while also wanting to reduce their energy footprint. In the laptop power adapter market, this has challenged engineers to find new ways to pack more power in smaller spaces while minimizing power loss to deliver more efficient adapters.

Chicony Power and TI were able to miniaturize the power adapter design and lower the use of mechanical materials by 40% by leveraging TI’s LMG2610 GaN FET, which integrates upper and lower switches, gate driver IC, level shifter and bootstrap circuits on a single chip, as well as Chicony Power’s 3D structure, component miniaturization, heat dissipation system and electromagnetic interference (EMI) suppression design expertise. Le Petit has a compact size of 49cm3, with a power supply conversion efficiency as high as 94% compared with 89% achieved by typical power adapters using silicon materials.

“Our collaboration with Chicony Power is an example of how TI’s products help make electronics smaller, more energy-efficient and more reliable,” says Luke Lee, TI’s VP for Asia and president for Taiwan, Korea and South Asia. “Our highly integrated GaN technology enables power adapters with improved thermal performance and power efficiency while delivering high power density with fewer components,” he adds.

“Chicony has been committed to corporate social responsibility and has been implementing the code of conduct of Responsible Business Alliance (RBA) for many years,” notes Chicony Power’s chief procurement officer Winson Huang. “The collaboration with TI to develop a new generation of power adapters will not only provide consumers with lighter and more convenient devices, compared to other 65W adapters in the market, but also use the advantages of both parties to jointly create more energy-efficient products.”

Addressing thermal and EMI challenges

In addition to power efficiency and size advantages delivered by TI’s integrated GaN technology, the UCC28780 and UCC28782 flyback controllers support high-frequency zero-voltage switching (ZVS) design. Combining these advantages with Chicony Power’s power design expertise, Chicony Power’s designers were able to overcome the temperature increases and rise in EMI typically caused by higher-frequency energy in lightweight power supplies, and effectively reduced the size of the power adapter while maintaining temperature and performance control.

See related items:

TI’s GaN used in Delta’s enterprise server power supplies for data centers

TI launches first automotive GaN FET with integrated driver, protection and active power management

Tags: E-mode GaN FETs


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