AES Semigas


18 February 2022

Transphorm to uplist from OTCQX to Nasdaq Capital Market

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — says that its common stock has been approved for listing on the Nasdaq Capital Market.

Trading on Nasdaq is expected to commence at the market open on 22 February, and the shares will continue to trade under the ticker symbol ‘TGAN’. They will continue to trade on the OTCQX until trading on Nasdaq commences. Stockholders are not required to take any action as a result of the uplisting.

“Our uplisting to Nasdaq is a significant milestone for Transphorm and is a testament to the dedication and hard work of the Transphorm team, as well as our strong cooperation with our valued customers and partners,” says president & co-founder Primit Parikh. “This uplisting should raise the visibility of Transphorm in the capital markets and allow for increased sponsorship from worldwide institutional investors as well as increased liquidity in the trading volume of our stock,” he believes.

“This achievement and recognition represents a key benchmark for both GaN and Transphorm,” says chief technology officer & co-founder Umesh Mishra. “With our world-leading innovations in GaN and robust IP portfolio of more than 1000 patents, we are proud to be a world leader in GaN power conversion, which is the next large market for GaN since GaN LEDs and GaN RF transistors.”

Transphorm claims that its patented GaN platform differs from competing solutions in ways that are crucial to power conversion application performance requirements – from 45W fast chargers/power adapters to 4kW gaming, data-center server, crypto mining, and industrial power supplies to renewable energy to higher-power automotive converter and inverter applications through multi tens of kilowatt. Transphormalso claims to be one of the few high-voltage GaN manufacturers that is vertically integrated, controlling its GaN FET designs through innovation, epitaxial wafer and manufacturing processes.

The company also recently announced that product revenue grew sequentially for an eighth consecutive quarter (up 220% year-on-year to a record $3.6m), and shipped over 1 million SuperGaN Gen IV FETs for 45-300W power-adapter and fast-charger applications in December.

See related items:

Transphorm’s quarterly revenue up 129% year-on-year

Tags: Transphorm GaN-on-Si GaN HEMT


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