AES Semigas


20 January 2022

Navitas participating at Baird’s 2022 Vehicle Technology & Mobility Conference

Gallium nitride (GaN) power integrated circuit firm Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland is participating at Baird’s Vehicle Technology & Mobility Conference being held virtually on 25 January at 2:55pm EST (hosted by the Baird’s Equity Research and Global Investment Banking teams).

Compared with legacy silicon solutions, GaN-based on-board chargers (OBCs) are estimated to charge 3x faster with up to 70% energy savings. GaN OBCs, DC-DC converters and traction inverters are estimated to extend electric vehicle (EV) range or reduce battery costs by 5%, and to accelerate adoption of EVs worldwide by three years. Navitas will highlight how efficiency and cost improvements offered by GaN allow EV manufacturers to address the key challenges of reducing charging time, increasing energy savings, lowering price and extending range.

“GaN isn’t only a critical enabling technology, it’s a crucial sustainability factor,” says Navitas’ CEO & co-founder Gene Sheridan. “Thanks to the efficiency and cost improvements enabled by Navitas GaN, the estimated three-year acceleration of EV adoption could deliver a 20%/year reduction in road sector CO2 emissions by 2050, the target of the Paris Accord,” he adds.

Tags: GaN Power electronics


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