AES Semigas


18 January 2022

Nippon Sanso and NCSU collaborating on GaN epitaxy and device technology

Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan and North Carolina State University (NC State) have announced a three-year agreement to collaborate on methods and equipment solutions to enable gallium nitride (GaN)-based optoelectronic, photonic and electronic devices. NC State will use a TNSC SR2000 metal-organic chemical vapor deposition (MOCVD) reactor for its R&D, with support and expertise from TNSC. The goal of the three-year collaboration is to advance the state-of-the-art in GaN-based device epitaxy and device technology with a blend of complementary equipment, process and device expertise.

“NC State has an excellent reputation for wide-bandgap device and technology development and commercialization,” comments TNSC corporate officer Kunihiro Kobayashi. “Taiyo Nippon Sanso is looking forward to working with professor Fred Kish, the NC State staff and students, and outside companies that work with the NC State Nanofabrication Facility.” As applications for GaN lasers and LEDs continue to expand, TNSC expects its SR and UR MOCVD platforms to be the platforms of choice for advanced GaN optoelectronics fabrication.

“With the addition of the TNSC MOCVD system, NC State is now one of the very few research institutions with this state-of-the-art materials growth capability,” says Fred Kish, the M.C. Dean Distinguished Professor of Electrical and Computer Engineering and director of the NC State Nanofabrication Facility. “The collaboration with TNSC will significantly impact advances in the realization of next-generation wide-bandgap and ultrawide-bandgap materials and devices,” he reckons.

See related items:

Sandia orders second Nippon Sanso SR4000HT

Tags: Taiyo Nippon Sanso




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