AES Semigas


14 July 2022

Transphorm adds 50mΩ 650V SuperGaN FET in TO-263, extending SMDs to high-power applications

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — has expanded its surface-mount package offerings with the addition of the TP65H050G4BS. The new higher-power surface-mount device (SMD) is a 650V SuperGaN FET in a TO-263 (D2PAK) offering a typical on-resistance of 50mΩ. It marks Transphorm’s seventh SMD, adding to a wide range of currently available PQFN devices for lower- to mid-power applications.

The JEDEC-qualified TP65H050G4BS offers several advantages to designers and manufacturers developing high-power (single-to-multi-kilowatt) systems typically used in data-center and broad industrial applications. It delivers Transphorm’s best-in-class reliability, gate robustness (±20Vmax) and silicon noise immunity threshold (4V) along with the ease of design and drivability synonymous with its GaN technology. Engineers use the larger D2PAK where both higher power and surface-mount packaging is needed, enabling better thermal performance versus PQFN-type packages while increasing the efficiency of PCB assembly through the use of a single manufacturing flow.

Available as a discrete device, the D2PAK is also provided on a vertical daughter card to increase the power density of Transphorm’s TDTTP2500B066B-KIT — a 2.5kW AC-to-DC bridgeless totem-pole power-factor correction (PFC) evaluation board. It can also be swapped into the 1.2kW synchronous half-bridge TDHBG1200DC100-KIT evaluation board to drive multi-kilowatt power.

“The D2PAK is an important addition to our portfolio. It expands the usability of our SMDs to high-power applications, where before we supported these with through-hole devices,” says Philip Zuk, senior VP of worldwide marketing, applications and business development. “It’s another step in helping customers leverage our GaN platform’s advantages with familiar TO-XXX packages that eliminate design challenges, simplify system development, and quicken go-to-market ramps.”

Transphorm claims to be the only GaN supplier currently offering high-voltage GaN devices in standard TO-XXX packages. Notably, these packages cannot be used with alternative e-mode GaN technology, given its inherent gate sensitivity to damage.

The new device and evaluation boards are available from distributors Digi-Key and Mouser.

See related items:

Transphorm introduces SuperGaN power FETs with launch of Gen IV GaN platform

Tags: Transphorm GaN-on-Si GaN HEMT


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